UHV Sputtering System
  WTi/Au/Ti或Ti/Au
  TaN或TiWSiN
  ITO或SiO2，TiO2

Power Sputtering System:
cathode 1  cathode ( 2" ) expandable to 4 cathodes DC 500W/1KW RF 500W (option)
　
Ultimate pressure(Torr )
5×10-7E 5×10-9E (option)

Pressure Control Bypass control
-APC (PM5 Set)

Mass Follow Control ＭＦＣ
Ar   100 cc/min
O2   50 cc/min

Heater :
400 ℃ (option) 600 ℃ 800 ℃

Substrate Holder
2" -Max.8" 
Rotation speed 30 - 120 rpm

Assistance
-Ion source  3 cm
-Plasma clean
-Base bias
Load-lock chamber Option
　
System Control PLC+interface (PLC+PC)
　
Function Control Vacuum  Semi-auto/Auto
-Process　Manual/Auto (Option)
-Record and Monitor(Option)

Safety
Valves control pneumatic control

Vacuum Gauge Ion/Cold cathode/TC
Digital display
Rack instruments and control system integrated