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Plused Laser Deposition System
超高真空脉冲激光镀膜设备
- High K Oxide material:Gd203,HrO2,HfO2,LaALO3,SrTIO2,etc.
- High Tc superconductors:YBCO
- RAM potential material:TiO2,BaTiO3,etc.
- Oxide Semiconductor:ZnO/ZnMgO,Cu2O,CuAlo3,etc.
- Ferroelectric oxide.
- Ⅲ-Nitride:AIN InN,GaN.
- Advanced material development
Stoichiometry
Target composition is preserved in the film
Pressure and temperature range
Large dynamic range of process gases and pressure (1 *10-10 torr to 1 torr)
Multilayers
Complex multilayer thin films can be deposited in a single deposition run.
LJ UHV PLD system Specification
| |
Model |
Pilot 320 |
Pilot 320L |
Pilot 400 |
Pilot 400L |
| Standard component |
Deposition chamber dimension |
Φ320mm |
Φ320mm |
Φ400mm |
Φ400mm |
| Load-lock chamber dimension |
NA |
Φ200mm |
NA |
Φ200mm |
| Substrate diameter |
1" |
1" |
2" |
2" |
| Targets |
1" diam. × 4 |
1" diam. × 4 |
1" diam. × 4 |
1" diam. × 4 |
| Heater dimension |
2" |
2" |
3" |
3" |
| Deposition chamber base pressure |
< 5*10-7 Torr |
< 5*10-9 Torr |
< 5*10-7 Torr |
< 5*10-9 Torr |
| Main vacuum pump |
260 liters/sec |
260 liters/sec |
400 liters/sec |
400 liters/sec |
| Computer control |
Yes |
Yes |
Yes |
Yes |
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| Optional |
Heater temperature |
400℃, 600℃, 800℃, 1000℃ by customer request |
| Laser System |
by customer request |
| Target Load-lock |
Optional |
Optional |
Optional |
Optional |
| Auto-pressure control(APC) |
Optional |
Optional |
Optional |
Optional |
| 520 liter/sec pumping package |
Optional |
Optional |
Optional |
Optional |
| Scanning-Laser-Beam delivery |
Optional |
Optional |
Optional |
Optional |
| Ion-Beam-Assisted deposition |
Optional |
Optional |
Optional |
Optional |
| High-Pressure RHEED |
Optional |
Optional |
Optional |
Optional |
| Wafer auto-transfer |
Optional |
Optional |
Optional |
Optional |
| Shutter function |
Optional |
Optional |
Optional |
Optional |
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