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当前位置:首页 > 离子束溅射镀膜 IBSD


Ion Beam Sputter Deposition
双离子源溅射系统


  
                3 cm 离子源                            5cm 离子源                                    12cm 离子源

设备结构示意图:


Ion Beam Sputter Deposition
Ion Beam Sputter Deposition (IBSD)
Reactive Ion Beam Sputter Deposition (RIBSD)
Ion BeamSputterDeposition (IBSD)

©  High-End Thin Film Deposition Process
©  Lower Pressure Sputter Deposition (10-4  Torr), Sputtered Atoms Retain Kinetic Energy Due to Minimal Scatting in Low Pressure Environments
©  High Quality, Smooth, Pin Hole Free Films
©  Enhanced Adhesion and Micro-structure Control
©  Yields Excellent Coverage at Small Thicknesses and on High  Aspect Ratio Features
©  Independent Control of Ion Beam Parameters Allows User to Engineer Film for Desired Properties
©  Low energy ion assist with end-Hall ion sources
©  Typically, Film Properties from Ion Beam Deposition Exceed those Deposited by Evaporation or Magnetron Sputtering


Ion BeamSputterDeposition Applications
Device / Process                                Materials
Superconductors                                YBaCuOx, LaSrTiOx
Thin Film Heads                                 NiFe, CrCo
Optical Thin Films                              Al2O3, Ta2O5, TiO2, SiO2
Ring Laser Gyro Mirrors Multilayer    SiO2/TiO2
Dielectric Films                                   SiO2, TiO2, AlN, etc.
Encapsulation Films                           Si3N4, Al2O3
Anti-reflection Coatings                      MgF2, SiO2, Ta2O5, TiO2
Interconnect Films                              W, Au, Cu
Sensors                                              Composites or Alloys
Advanced Magnetic Heads                 NiFe, Ta, Cu, Co, FeMn
Semiconductor                                    Si3N4, DLC
X-ray Optics                                        W, Cu, Mo, Si, B4C, Ni, C
Laser Facets                                       Si3N4, SiO2, Al2O3, Si
High Reflectance Mirrors                    Refractory Oxides, Si
Divisional Wave Multiplexers              Refractory Oxides, Si
Laser coatings                                    Nb2O5, Ta2O5, HfO2, SiO2

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